MCQ Questions Electrical Engineering Field Effect Transistors

Take a look at these MCQ Questions Electrical Engineering Field Effect Transistors for engineering interview questions and our tips on how to answer them. If you’re applying for an engineering internship, graduate scheme or entry-level job, you’ll face at least one interview as part of an engineering employer’s recruitment process. You may be interviewed by one or more members of the HR team, senior members of the engineering team you’d be joining or a mixture of both. In this section we will study MCQ Questions Electrical Engineering Field Effect Transistors.

As well as questions about your reasons for applying to the role and the employer in question, engineering recruiters will be assessing your potential in the areas that is crucial to any engineering role: technical expertise. Engineers may be asked to perform feats of fantastic technical prowess, but it will be as as part of a Justice League rather than as a solo engineering super hero.

The interviewer is almost as nervous as the candidate in most interviews. You might wonder if you look confident enough, if you will hire the right person, or if you are asking the right engineering interview questions. The last question is arguably the most crucial part to worry about when you’re interviewing candidates.

MCQ Questions Electrical Engineering Field Effect Transistors - Set - 4

Question 1:

In class A operation, the input circuit of a JFET is ___________ biased

A. forward
B. reverse
C. not
D. none of the above

Check Answer

Correct Answer – (B)

Question 2 :

A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off) = -5 V. The value of the drain current is ___________

A. 20 mA
B. 0 mA
C. 40 mA
D. 10 mA

Check Answer

Correct Answer – (A)

Question 3 :

The input impedance of a MOSFET is of the order of ___________

A. O
B. a few hundred O
C. kΩ
D. several MO

Check Answer

Correct Answer – (D)

Question 4 :

A CS JFET amplifier has a load resistance of 10 kΩ , RD= 820° . If gm= 5mS and Vin= 500 mV, the output signal voltage is ___________

A. 2.05 V
B. 25 V
C. 0.5 V
D. 1.89 V

Check Answer

Correct Answer – (D)

Question 5 :

In a JFET, IDSS is known as ___________

A. drain to source current
B. drain to source current with gate shorted
C. drain to source current with gate open
D. none of the above

Check Answer

Correct Answer – (B)

MCQ Questions Electrical Engineering Field Effect Transistors

Question 6:

The gate of a JFET is ___________ biased

A. reverse
B. forward
C. reverse as well as forward
D. none of the above

Check Answer

Correct Answer – (A)

Question 7:

A certain common source JFET has a voltage gain of 10. If the source bypass capacitor is removed, ___________

A. the voltage gain will increase
B. the transconductance will increase
C. the voltage gain will decrease
D. the Q-point will shift

Check Answer

Correct Answer – (C)

Question 8:

In a FET, there are ___________ pn junctions at the sides

A. three
B. four
C. five
D. two

Check Answer

Correct Answer – (D)

Question 9:

A MOSFET is sometimes called ___________ JFET

A. many gate
B. open gate
C. insulated gate
D. shorted gate

Check Answer

Correct Answer – (C)

Question 10:

The two important advantages of a JFET are ___________

A. high input impedance and square-law property
B. inexpensive and high output impedance
C. low input impedance and high output impedance
D. none of the above

Check Answer

Correct Answer – (A)

MCQ Questions Electrical Engineering Field Effect Transistors

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